CXDM6053N surface mount n-channel enhancement-mode silicon mosfet description: the central semiconductor CXDM6053N is a high current n-channel enhancement-mode silicon mosfet, designed for high speed pulsed amplifier and driver applications. this mosfet offers high current, low r ds(on) , low threshold voltage, and low leakage current. marking: full part number maximum ratings: (t a =25c) symbol units drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (steady state) i d 5.3 a maximum pulsed drain current, tp=10s i dm 30 a power dissipation p d 1.2 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =60v, v gs =0 1.0 a bv dss v gs =0, i d =250a 60 v v gs(th) v gs =v ds , i d =250a 1.0 1.3 3.0 v v sd v gs =0, i s =2.0a 1.2 v r ds(on) v gs =10v, i d =5.3a 30 41 m r ds(on) v gs =4.5v, i d =4.7a 33 52 m q g(tot) v ds =30v, v gs =5.0v, i d =5.3a 8.8 nc q gs v ds =30v, v gs =5.0v, i d =5.3a 1.9 nc q gd v ds =30v, v gs =5.0v, i d =5.3a 3.6 nc c rss v ds =30v, v gs =0, f=1.0mhz 53 pf c iss v ds =30v, v gs =0, f=1.0mhz 920 pf c oss v ds =30v, v gs =0, f=1.0mhz 49 pf t on v dd =30v, v gs =4.5v, i d =4.4a r g =1.0, r l =6.8 33 ns t off v dd =30v, v gs =4.5v, i d =4.4a r g =1.0, r l =6.8 42 ns features: ? low r ds(on) (52m max @ v gs =4.5v) ? high current (i d =5.3a) ? logic level compatibility applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-89 case r1 (9-august 2012) www.centralsemi.com
CXDM6053N surface mount n-channel enhancement-mode silicon mosfet lead code: 1) gate 2) drain 3) source marking: full part number sot-89 case - mechanical outline pin configuration www.centralsemi.com r1 (9-august 2012)
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